摘要
研究了在SrTiO3-PbTiO3- Bi2O3·3TiO2系中分别添加CaTiO3和MgTiO3对材料介电性能的影响,利用复合添加MgTiO3、CaTiO3、MnO2、Nb2O5、SiO2对SrTiO3-PbTiO3- Bi2O3·3TiO2系介质材料进行改性,制得εr=1500~2000耐压Eb≥12 MV/m、损耗tgδ≤6×104的高压瓷介电容器材料。
The influences of the dopants of CaTiO3 and MgTiO3 on the dielectric properties are discussed. The modified materials based on SrTiO3-PbTiO3- Bi2O3·3TiO2 were prepared by doping multiple dopants of MgTiO3, CaTiO3, MnO2, Nb2O5, SiO2. The obtained materials exhibit the properties as follows: dielectric constant εr=1 500~2 000, break down voltage Eb≥12 MV/m and dielectric loss tgδ≤ 6×104.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2002年第12期27-28,32,共3页
Electronic Components And Materials