射频器件在片测试结构与去嵌入方法

On-wafer Probing Structures of Radio Frequency Device and De-embedding Approaches

传统的硅基射频频段器件在片测试结构采用器件加辅助测试的pad结构、连线的组合形式,通过量测待测结构和相应的去嵌结构得到各自s参数,再通过算法将在片测试结构附加在器件的寄生去除,从而得到器件本身的性能参数。研究在高于6GHz的频段,应用并比较了开路/短路法、多段线法和四端口法去嵌效果,提出开路/短路法仍是有效实用的去嵌方法,并提出应用开路/短路法在高于6GHz波频段的优化重点在于去嵌结构设计本身。

A RF probing structure is built by a DUT(Device Under Test),RF testing PADs and its connecting lines for on-wafer RF CMOS device testing at radio frequency and microwave band.To measure the s-parameters of the probing structure and its additional de-embedding structures,we can get the s-parameters of DUT by a proper algorithm.In this work,we verified the three types of deembedding approaches such as OPEN-SHORT,L-2L and 4-port approaches at even higher than 6 GHz frequency band.Open-Short approach is still a practical and effective way to get the proper intrinsic data for RF devices.