0.13μm全耗尽绝缘体上硅晶体管单粒子效应仿真研究

Simulation Study on SEE of 0.13 μm FD-SOI Transistors

利用计算机辅助设计Silvaco TCAD仿真工具,研究了0.13μm全耗尽绝缘体上硅(FD-SOI)晶体管单粒子瞬态效应,分析了不同线性能量转移(LET)、单粒子入射位置和工作偏置状态对单粒子瞬态的影响。结果表明,LET值的增加会影响沟道电流宽度,加大单粒子瞬态峰值及脉冲宽度。受入射位置的影响,由于栅极中央收集的电荷最多,FD-SOI器件的栅极中央附近区域单粒子瞬态效应最敏感。单粒子瞬态与器件工作偏置状态有很强的相关性,器件处于不同工作偏置状态下,关态偏置受单粒子效应影响最大,开态偏置具有最小的瞬态电流峰值和脉宽。

Single event effect of 0.13μm fully depleted silicon-on-insulator(FD-SOI)is investigated using Silvaco TCAD simulation tool.The effects of different linear energy transfer(LET),incident position and bias states on single event effect are analyzed.The simulation results show that the increase of LET value affects the channel width,and increases transient pulse peak value and pulse width.The single-event transient effect is affected by the incident position.The most sensitive region of the FD-SOI device is near the center of the gate,and the charges are collected at the center of the gate.The device is in different operating bias states,where the off-state bias condition is most affected by the single event effect.The on-state has the smallest transient pulse peak value and pulse width,and the device operating bias state has a strong correlation with the single event effect.