Cu元素比例对Cu2ZnSnS4薄膜光电性能的影响

Effect of Cu Ratio on Photoelectric Properties of Cu2ZnSnS4 Thin Films

采用溶胶-凝胶法,以金属醇盐和硫脲为原料,并将乙二醇甲醚为溶剂在玻璃衬底上制备不同Cu组分比例的Cu2ZnSnS4薄膜材料,通过金相显微镜进行观察。结果表明:Cu元素摩尔比为1.8、1、9时,薄膜表面颗粒分布较为均匀,最强吸光度为0.23A、透射比为80.86%。随着Cu比例的增大,载流子浓度逐渐升高,迁移率和霍尔电压降低,最大载流子浓度和迁移率分别为3.87×10^17/cm^3和3.58×10^2cm^2/V.S,霍尔电压最大值为12mV,Cu元素比例增加后,CZTS薄膜结晶质量变差,电阻率减小。

Cu2ZnSnS4 thin film materials with different Cu composition ratios were prepared on glass substrates by sol-gel method using metal alkoxide and thiourea as raw materials and ethylene glycol methyl ether as solvent. The results show that when the molar ratio of Cu is 1.8, 1, 9, the particle surface distribution of the film is relatively uniform, the strongest absorbance is 0.23 A, and the transmittance is 80.86%. As the Cu ratio increases, the carrier concentration gradually increases, the mobility and the Hall voltage decrease, and the maximum carrier concentration and mobility are respectively, and the Hall voltage maximum is 12 mV. When the proportion of Cu element increases,the crystal quality of CZTS film deteriorates and the resistivity decreases.