双顶栅极石墨烯的太赫兹信号源

Terahertz signal source by double-top-gate graphene

为探索产生太赫兹信号的新型材料与器件,提出一种基于石墨烯的具有双顶栅极结构的场效应管器件(FET)模型,并对此器件所具有的太赫兹特性进行研究。使用费米函数推导计算发现,器件在一定的太赫兹频段存在负电导的可能,同时得到了石墨烯综合电导与偏置电压、弛豫时间、栅极电压以及温度等因素之间的关系,表明此器件具有作为新型太赫兹源的潜力。

In order to explore the new materials and devices that generate terahertz signals,a graphene-based Field Effect Transistor(FET)device model with double-top-gate structure is proposed,and the terahertz characteristics of the device are studied.Using the Fermi function,it is found that the device has the possibility of negative conductivity in a certain terahertz band.The relationships among graphene integrated conductivity and bias voltage,relaxation time,gate voltage and temperature are obtained,which indicate the potential of this device as a new terahertz radiation source.