基于3μm-SOI的波分复用/解复用器与电吸收型VOA的单片集成（英文）

Monolithic integration of a wavelength division multiplexer/demultiplexer and electro-absorption VOAs based on 3 μm-SOI

波分复用/解复用器与可调光衰减器的是光通信系统中的重要元器件。为了得到制备工艺简单、响应速度快的二者的单片集成芯片,并且考虑到其与其他不同光器件的集成可能性,在绝缘体上硅材料制作了16通道、信道间隔200GHz的阵列波导光栅复用/解复用器与电吸收型可调光衰减器的单片集成。该器件的片上损耗小于7dB,串扰小于-22dB。电吸收型VOA在20dB的衰减量下的功耗为572mW(106mA,5.4V)。此外,该器件可以实现光功率的快速衰减,在0~5V的外加方波电压下,VOA上升及下降时间分别为50.5ns和48ns。

Wavelength division multiplexers/demultiplexers and variable optical attenuators(VOAS) are key devices used in optical communication systems. In order to get their monolithic integrated chip with simple fabrication process and fast time response, and considering the possibility of it to integrate with other different optical devices, a 16-channel 200 GHz arrayed waveguide grating(AWG) multiplexer/demultiplexer was monolithically integrated with electro-absorption variable optical attenuators on a silicon-on-insulator(SOI) platform. The on-chip loss was less than 7 d B and the crosstalk was less than-22 dB. The power consumption of the electro-absorption VOA is 572.4 mW(106 mA, 5.4 V) at 20 dB attenuation. Besides, the device provides fast optical power attenuation, and in a 0-5 V square voltage,the rising/falling time of the VOA is 50.5 ns and 48 ns, respectively.