使用对比法研究硅光电池的特性

Study on the characteristics of silicon photocells by using contrast method

通过对两种不同面积硅光电池的测量,再加以运用Origin数据处理软件,对比分析了硅光电池暗态正向偏压的I-U特性、光照下的伏安特性,开路电压、短路电流以及光功率与光照强度的关系,并据此得出:短路电流与光照强度成呈线性增加,开路电压与光照强度呈非线性增加,且面积较大的硅光电池增速更快;在相同光照强度下,大面积硅光电池的短路电流、开路电压数值较大;光功率随光照强度的增速与硅光电池面积基本成正比。

By measuring the two kinds of silicon photocells,and then use the Origin software to compare the I-U curves of silicon photocells at forward bias voltages,volt-ampere characteristics,the relationships between open circuit voltage,short circuit current,light power and light intensity,and then educes:The short circuit current and the light intensity increased linearly,the open circuit voltage and the light intensity showed a nonlinear increase,and the larger area of silicon photocells growth faster;under the same light intensity,large area silicon photocells short circuit current,open circuit voltage value are bigger;light power with the growth of the intensity of the light and silicon area is proportional to the basic.