高纯高均匀锡靶材的制备工艺研究

Study on the preparation Technology of High Pure and High uniformity New Tin Target

溅射靶材应用于微电子行业的物理气相沉积(Physical Vapor Deposition,PVD)工艺,是制备面板、半导体芯片、光学器件、磁记录介质等特殊功能薄膜的关键材料。特别是高纯度溅射靶材不但能降低微电子行业的生产成本,还能大大提高我国微电子产品的国际竞争力[1]。本文针对金属锡靶材纯度、致密性、内部组织结构等技术问题,研究锡靶材的制备工艺。采用真空铸造法制备高纯锡靶材铸锭,后续进行压力加工和热处理工艺改变靶材的内部组织结构,最终获得纯度高、致密性好、晶粒均匀等轴、一致性高的高纯锡靶材。

The sputtering target material is applied in the physical vapor deposition(PVD)process of the microelectronic industry,and is a key material for preparing special functional films such as a panel,a semiconductor chip,an optical device,a magnetic recording medium and the like.In particular,the high-purity sputtering target material not only can reduce the production cost of the micro-electronic industry,but also can greatly improve the international competitiveness of the microelectronic products in China.aiming at the technical problems of purity,compactness,internal structure and the like of the metal tin target material,the preparation process of the tin target material is researched,a high-purity tin target ingot is prepared by adopting a vacuum casting method,the internal structure of the target material is changed after the pressure processing and the heat treatment process are carried out,the purity is high,And the high-purity tin target with high compactness and uniform grain size and the like is high in consistency.