稀土掺杂GaN基稀磁半导体材料的研究进展

Research Progress on Rare Earth-Doped GaN-Based Diluted Magnetic Semiconductor Materials

GaN基稀磁半导体材料具有高于室温的铁磁性和优异的光电性能,在半导体电子自旋器件领域有广阔的应用前景。系统地介绍了制备方法对稀土Gd掺杂GaN基稀磁半导体材料铁磁性的影响,讨论了Gd掺杂GaN基稀磁半导体材料中铁磁性的起源,介绍了除Gd以外的稀土离子掺杂GaN基稀磁半导体材料中的铁磁性,以及共掺杂对GaN基稀磁半导体材料的铁磁性能的影响。目前,GaN基稀磁半导体材料的铁磁性仍无法满足半导体电子自旋器件的要求。共掺杂工艺可以有效地解决稀土离子掺杂引入的较大晶格应变,促进自旋电子之间的交互作用,是一种改善GaN基稀磁半导体材料的铁磁性能的有效途径。

GaN-based diluted magnetic sem iconductor m aterials have an extensive application prospect in the field of sem iconductor spin electric devices,due to the ferrom agnetism above the room tem perature and the excellent optoelectronic properties.The influences of the preparation m ethods on the ferrom agnetic property of the Gd-doped GaN-based diluted magnetic semiconductorm aterials are system atically introduced,and the origin of ferrom agnetism for the Gd-doped GaN-based diluted magnetic semiconductor m aterials is discussed.In addition,the ferrom agnetic properties of G aN-based diluted magnetic sem iconductor materials doped with other rare earth ions except Gd and the influence of co-doping on the ferrom agnetic properties of GaN-based diluted magnetic sem iconductor m aterials are summarized.Atp resent,the ferrom agnetic properties of the GaN-based diluted magnetic semiconductor m aterials can notm eet the requirem ents of the sem iconductor spin electric devices.The co-doping can effectively solve the problem of larger lattice strain induced by doping rare earth ions and improve the spin-electrons interaction.Therefore,the co-doping is an efficient path to improve the ferrom agnetic properties of GaN-based diluted magnetic sem iconductor materials.