摘要
A monolayer of Sr2Nb3Oio(SNO)is deposited on the Pt/Ti/SiCWSi(Pt?Si)or Pt/Ti/polyimide(Pt-Pl)substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline(Nai_xKx)NbO3(NKN)film at 350℃.The crystalline NKN film is grown along the[001]direction on the SNO/Pt-Si(or SNO/Pt-PI)substrate.Due to the presence of oxygen vacancies in the SNO seed-layer,the NKN film exhibits low ferroelectric properties and large leakage current.To ameliorate these properties,the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300℃,which removes the oxygen vacancies.Consequently,the NKN film deposited on this substrate exhibits promising electrical properties,namely a dielectric constant of 278,dissipation factor of 1.7%,a piezoelectric 8nstant of 175 pm`V^-1,and a leakage current density of 6.47 x 10^-7 A cm^-2 at-0.2 MV crrT1.Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350°C.Hence,the NKN films grown on the SNO seed-layer at 350°C can be applied to electronic devices with flexible polymer substrates.
