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喷墨打印镉基绿光量子点发光二极管及其界面 被引量:6

Performance and Interface of Inkjet-printed Cadmium(Cd)-based Green Quantum Dot Light-emitting Diodes
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摘要 喷墨打印镉基量子点发光二极管(QLEDs)有望应用于大尺寸全彩显示面板且具有材料利用率高的特点而广受关注。但目前喷墨打印器件效率远低于旋涂制备的同结构器件,针对这一问题,本文研究了在PVK空穴传输层上喷墨打印绿光量子点器件及量子点墨水溶剂对传输层界面的影响。研究发现,喷墨打印过程中的层间互溶是影响器件效率的关键,在采用正交溶剂结合喷墨工艺优化实现了高质量的膜层与界面后,获得了6.3%的喷墨印刷绿光QLEDs外量子效率。 Inkjet-printed quantum dot light-emitting diodes(QLEDs)have received widely attention,owing to their potential for use in large-area full-color pixelated display with high material utilization.However,the performance of the inkjet-printed QLEDs is always inferior to the spin coated devices with the same structure.In this study,the performance of the inkjet-printed green QLEDs based on PVK layer and the effects of quantum dot ink formula on transport layer interfaces were investigated.It is revealed that layer erosion is a key issue for performance of inkjet-printed QLEDs.An external quantum efficiency of 6.3%was achieved in inkjet-printed green QLEDs with high-quality film and interface by employing the orthogonal solvent via optimizing inkjet printing technology.
作者 熊雪莹 魏昌庭 苏文明 崔铮 XIONG Xue-ying;WEI Chang-ting;SU Wen-ming;CUI Zheng(School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China;Printable Electronics Research Center,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)
出处 《发光学报》 EI CAS CSCD 北大核心 2019年第10期1274-1280,共7页 Chinese Journal of Luminescence
基金 国家重点研发计划项目(2016YFB0401600) 国家自然科学基金(U1605244) 江苏省研究生科研创新计划(SJKY19_0319)资助项目~~
关键词 喷墨印刷 量子点发光二极管 电致发光 层间互溶 inkjet printing quantum dot light-emitting diodes electroluminescence layer erosion
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  • 1Sele C W, von Werne T, Friend R H, et al. Lithography-free, self-aligned inkjet printing with sub-hundred nanometer resolution[J]. Adv. Mater. 2005, 17(8) :997-1001.
  • 2Bennett R, Edwards C, Lee J, et al. Precision industrial ink jet printing technology for full color PLED display and TFT-[.CD manufactaring [ C ]/ / International Display Manufacturing Conference ( I DMC ) , Taiper, China: SID, 2003:499.
  • 3Peng X Z, Horowitz G, Fichou D, et al. All-organic thin-film transistors made of alpha sexithienyl semiconducting and various polymeric insuiating layers[J].Appl. Phys. Lett. , 1990, 57: 2013 (1990):2013-2015.
  • 4Klauk H, Halik M, Zschieschang U, et al. High-mobility polymer gate dielectric pentacene thin film transistors [J].J. Appl. Phys., 2002, 92(9):5259-5263.
  • 5Kawase T, Sirringhaus H, Friend R H, et al. All-polymer thin film transistors fabricated by high-resolution ink-iet printing [C]//IEDM Technical Digest : International Electron Devices Meeting ( IEDM) , San Francisco, USA: IEEEE 2000: 623-626.
  • 6Lin C T, Hsu C H, Chen I R, et al. Enhancement of carrier mobility in all-inkier-printed organic thin-film tran- sistors using a blend of poly(3-hexylthiophene) and carbon nanoparticles[J]. Thin Solid Films, 2011,519(22): 8008-8012.
  • 78 Tseng H Y, Subramanian V. All inkjet printed self-aligned transistors and circuits applications [C]//1EDM Tech- nical Digest:International Electron Devices Meeting ( IEDM) , Baltimore, USA:IEEE, 2009: 1-4.
  • 8Molesa S E, Vornbrock A de la F, Chang P C, etal. Low-voltage inkjetted organic transistors for printed RFID and display applications [C]//IEDM Technical Digest : International Electron Devices Meeting ( IEDM), Washington, USA : IEEE, 2005 : 109-112.
  • 9Chung S, Kim S O, Kwon S K, et al. All-inkier-printed organic thin-film transistor inverter on flexible plastic sub- strate [J].IEEE Electron Device Letters, 2011, 32(8):1134-1136.
  • 10Chen B, Cui T H, Liu Y, et al. All-polymer RC filter circuits fabricated with inkjet printing technology [J].Solid- State Electronics, 2003, 47(5) :841-847.

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