传导冷却高功率半导体激光器单巴器件CW工作模式下的热加速寿命试验

Thermally Accelerated Aging Test of Conduction-cooled-packaged High Power Diode Laser Bar in CW Mode

可靠性是高功率半导体激光器(HLD)的一个重要性能。热加速寿命试验是HLD寿命评价和可靠性分析的重要技术。在本文中,我们在高温测试平台上对铟焊料封装的18个中心波长为808 nm的传导冷却型HLD单巴器件在恒定电流60 A条件下进行55,65,80℃3组热沉温度下的热加速寿命试验。根据器件输出功率在加速寿命测试期间的降低趋势,得到该批HLD器件的寿命分别为1 022,620,298 h,再根据Arrhenius公式得到该器件的激活能为0.565 41 eV,从而外推得到器件在室温下的寿命为5 762 h。可见55℃下器件寿命加速了5倍,而在65℃下寿命加速了8.5倍,80℃下寿命加速17倍。此外,我们还分析了器件热加速寿命试验后的性能。

In the applications of high power semiconductor laser(HLD),the reliability is the important performance.Therefore lifetime evaluation and reliability analysis technologies become the key of practical application and industrialization of HLD.The thermally accelerated aging test is able to monitor the failure process,reveal defects and weak links of device design process,materials and components,and provides guidance for optimizing the chip and package structure.It is an important technology of lifetime evaluation and reliability analysis.In this work,a thermally accelerated aging test of eighteen conduction-cooled-packaged 60 W 808 nm high power diode laser arrays packaged by indium solder in CW mode at constant current 60 A under the temperature 55,65,80℃of heat sink has been reported.According to the decreasing trend of the output power during the thermal acceleated aging test,the lifetime 1 022,620,298 h have been obtained,respectively.Based on the Arrhenius formula,the activation energy of the device is 0.565 41 eV,and the lifetime of the device is 5 762 h at room temperature.It can be seen that the lifetime of the device accelerates by 5 times at 55℃,8.5 times at 65℃and 17 times at 80℃.In addition,we show and analyze the performance of the device after accelerated aging test.