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一种新型高增益Quasi-Z源逆变器 被引量:1

A new high-gain Quasi-Z source inverter
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摘要 为了解决传统Z源逆变器的升压能力不足,提出一种新型高增益Quasi?Z源逆变器。该新型拓扑结构将传统Quasi?Z源逆变器的两个电感用升压单元和改进型开关电感替换得以实现。在Matlab/Simulink下对该新型拓扑结构和传统Quasi?Z源拓扑结构的直流链电压、电容电压和负载电压进行仿真分析对比。结果显示,相比于传统的Quasi?Z源逆变器,该新型拓扑结构性能有了大幅度改善,提高了升压能力,使其可以有更加广泛的应用场合,有效抑制了启动冲击电流,从而避免了启动瞬间逆变器开关器件的损坏。 A new high?gain Quasi?Z source inverter is proposed to solve the problems of insufficient boosting capacity of conventional Z?source inverters.This new topological structure can be produced by replacing the two inductors of conventional Quasi?Z source inverter with boosting unit and modified switching inductor.The simulation analysis and comparison of DC link voltage,capacitor voltage and load voltage of the new topological structure and the traditional Quasi?Z source topological struc?ture are carried out based on Matlab/Simulink.The results show that,in comparison with traditional Quasi?Z source inverter,the new topological structure performance has been improved more greatly,and the boosting capability has been improved,so that it can be used in a wider range of applications,and the starting impulse current has been effectively suppressed,thus avoiding the damage of the switching device of the inverter at the start?up moment.
作者 许文强 王维庆 王海云 刘超吾 XU Wenqiang;WANG Weiqing;WANG Haiyun;LIU Chaowu(School of Electrical Engineering,Xinjiang University,Urumqi 830047,China;MOE Engineering Research Center for“Renewable Energy Power Generation&Grid Connection Technology”,Xinjiang University,Urumqi 830047,China)
出处 《现代电子技术》 北大核心 2019年第20期9-12,16,共5页 Modern Electronics Technique
基金 教育部创新团队(IRT_16R63) 自治区“天山雪松”计划(2017XS02) 教育厅重大专项(XJEDU2017I002)
关键词 Quasi-Z源逆变器 升压能力 拓扑结构 性能改善 仿真分析 理论验证 Quasi-Z source inverter boost capability topological structure simulation analysis theoretical verification
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