溶液法制备铟镓锌氧薄膜晶体管及其性能研究

Studies on the solution preparation and properties of indium gallium zinc oxide thin film Transistors

本文介绍了薄膜晶体管的结构及工作原理,并概述了几种常见的制备氧化物材料工艺方法,其中对溶液方法制备铟镓锌氧有源层进行了详细阐述.溶液法制备更有利于元素配比的调控,制备方法更灵活,可适用于大面积的生产.本文利用旋涂法和喷墨打印法制备了铟镓锌氧化物薄膜晶体管,并进行了电学性能测试与分析.

This paper introduced the structure and working principle of thin film transistor,and then summarized the process of the preparation of several common oxide material,and described the preparation of indium gallium zinc oxide channel layers by solution method.This method is flexible and can be prepared in large scale.In this paper,indium gallium zinc oxide thin film transistors were prepared by spin coating and inkjet printing,and analyzed on electrical properties.