异质结(c-Si/a-Si)双面组件发电特性研究

Studies on Power Generation Characteristics of Two-Sided oHeterojunction(c-Si/a-Si) Modules

异质结(c-Si/a-Si)双面组件的实际发电性能受各种因素影响,该文重点就组件距离地面高度和背面檁条遮挡对组件发电量的影响进行研究。结果表明,兼顾组件安装难度和组件发电量增益两方面因素,组件下边缘距离地面高度设定为1.5 m较为合适。通过长期发电量跟踪对比,支架背面无菱条遮挡时,异质结(c-Si/a-Si)双面组件发电量平均增益为4.15%。

The actual power generation performance of the two-sided heterojunction(c-Si/a-Si) assembly is affected by various factors.This paper focuses on the influence of the assembly height above the ground and the back purlin occlusion on the assembly power generation.The results show that it is more appropriate to set the lower edge of the module at 1.5 m above the ground,taking into account both the installation difficulty of the modules and the power generation gain of the modules together.Through the long-term tracking and comparison of power generation,when there are no diamond bars covered on the back of the bracket,the power generation gain of the two-sided heterojunction(c-Si/a-Si) module averages 4.15%.