大面积ReS2微结构的制备及表征

Preparation and Characterization of Large Area ReS2 Microstructure

采用化学气相沉积法(Chemical Vapor Deposition,CVD),通过控制生长温度和时间,在氟金云母衬底(KMg3(AlSi3O10)F2)上制备出大面积、高质量的ReS2层状薄膜、纳米片、纳米花等微结构。利用拉曼显微镜(Raman)、光致发光光谱(PL)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、扫描电子显微镜(SEM)及能谱仪(EDS)对所制备的ReS2结构进行表征。结果显示:ReS2能够在表面平整且为惰性的氟金云母衬底上实现大面积高质量的面内、外生长;面外生长的ReS2纳米片和纳米花结构的拉曼光谱相对于层状的ReS2结构在207cm^-1附近的特征峰处存在红移现象,在163cm^-1附近的特征峰相对强度不断减弱;ReS2微结构的PL峰的位置基本无变化,但是峰值强度随面外生长而不断减弱。

Large-area and high-quality ReS2 microstructures,such as layered film and nanosheet and nanoflower were prepared on the fluorophlogopite substrate(KMg3(AlSi3 O10)F2 with the method of chemical vapor deposition(CVD)by controlling the growth temperature and time.The microstructure of the prepared ReS2 was characterized by Raman microscope,photoluminescence spectroscopy(PL),atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS)and scanning electron microscopy(SEM).The results show that ReS2 can not only achieve large area in-plane growth on smooth and inert fluorophlogopite substrate,but also out-of-plane growth;the Raman spectra of the out-of-plane grown nanosheets and nanoflower structures are red-shifted with respect to the layered structure at the characteristic peak around 207 cm^-1,and the relative intensity of the characteristic peak around 163 cm^-1 is increasingly weakened;the position of the PL peak is changed slightly but the peak intensity is continuously decreased along with the out-of-plane growth.