基于GaNFET的超窄脉冲高压调制器技术研究

Research on Ultra-Narrow Pulse Width High Voltage Modulator Based on GaNFET

随着新材料新器件的不断发展,宽禁带功率半导体的出现,推动了各个产业的进步,氮化镓晶体管(GaNFET)由于其寄生电容小、导通内阻小、无反向寄生二极管,具有开关速度快、频率高、开关损耗小的性能优势。文章将GaNFET首次应用在超窄脉冲的高压调制器中,进行了基于GaNFET的调制器拓扑与控制研究。文章简要介绍了调制器的技术指标,阐述了调制器的拓扑结构和工作原理,进行了仿真与试验并给出了仿真波形和测试波形,在超窄脉冲调制器研究方面取得了突破,成功研制了脉冲幅度10 kV、脉冲宽度50~100 ns、前沿小于50 ns的超窄脉冲高压脉冲调制器,并应用在W波段磁控管发射机上,对其未来应用前景作出了展望。

With the continuous development of new materials and devices and the emergence of wide band gap power semiconductors, the progress of various industries has been promoted. Gallium nitridetransistor(GaNFET) has small parasitic capacitance, small on-resistance and no reverse parasitic diode. The utility model has the advantages of fast switching speed, high frequency and low on/off switching loss. In this paper, GaNFET is applied to ultra-narrow pulse high voltage modulator for the first time, and the topology and control of modulator based on GaNFET are studied. In this paper, the technical specifications of the modulator are briefly introduced, the extension structure and working principle of the modulator are described, the simulation and test are carried out, and the simulation waveform and test waveform are given, which has made a breakthrough in the research of ultra-narrow pulse modulator. An ultra-narrow pulse high voltage pulse modulator with pulse amplitude 10 kV, pulse width 50 ns^100 ns and front less than 50 ns has been successfully developed and successfully applied to W-band magnetron transmitter. The application prospect is explored.