期刊文献+

一种改进湿式氧化过程中颗粒污染导致深坑的方法

Improving Deep Pit Caused by Particle Pollution in Wet Oxidation Process
下载PDF
导出
摘要 扩散炉管加热制程中分为湿式及干式氧化,厚度较厚的场区氧化层都使用湿式氧化方法,透过使用 氢气及氧气混合加热后产生水汽进入到炉管内部,与衬底基板反应生成二氧化硅。发现当混合气体经由 Torch传送到炉管内部沉积后发现含有金属镁的残留物。探讨炉管材料因高温热氧化后与水气发生化学变 化导致颗粒污染薄膜,透过更改现有连接材料使得微粒的污染减少。 There were wet oxidation and dry oxidation respectively that diffusion furnace in thermal oxidation. Wet oxidation method is used for thick oxide layer.After heating with hydrogen and oxygen, water vapor is generated and enters the furnace tend reacts with the substrate to form silicon dioxide.It found that there is Residue of magnesium metal deposition after the mixture gas to the torch to Furnace. In this paper , discuss that the particles contamination in the thin film due to the chemical reaction that the furnace tube material react to water vapor after thermal oxidation at high temperature.To reduce the particle contamination by change the connection that the materials.
作者 唐胜 黄建晟 TANG Sheng;HUANG Jiansheng(Huarun Shanghua Technology Co.,Ltd,Jiangsu 214028,China.)
出处 《集成电路应用》 2019年第11期24-25,共2页 Application of IC
关键词 集成电路制造 颗粒污染 湿式氧化法 金属污染 IC manufacturing particle contamination wet oxidation metal.
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部