单晶硅电池表面织构与光电特性的关系

Relationship Between the Surface Texture and Photoelectric Characteristics of Monocrystalline Silicon Cells

针对在单晶硅片表面制备陷光织构可提高吸光率,但同时将导致光生伏特效应被削弱的问题,定义了电池的光学特性系数和电学特性系数,以表征电池光电特性。通过采用不同的化学制绒工艺参数,在单晶硅片表面获得不同尺寸的表面织构,分析了织构平均高度对电池光电特性和转换效率的影响规律。结果表明:随着单晶硅片表面织构平均高度的增大,单晶硅电池的光学特性系数呈现先升高再降低的规律,电学特性系数呈现逐渐减小的规律;基于中型金字塔绒织构的硅电池同时兼顾了光学特性和电学特性,得到最高的光电转换效率为19.49%。

For the problem that preparing trapped textures on the surface of monocrystalline silicon wafers can increase its absorbance,but meanwhile the photovoltaic effect is weakened inevitably,thus the optical properties coefficient and electrical characteristic coefficient were defined to characterize the photoelectric characteristics of cells.Surface textures of different sizes on the surface of the monocrystalline silicon wafer were obtained by using different chemical texturing process parameters,and the influence rule of the average height of the texture on the photoelectric properties and conversion efficiency of the cells was analyzed.The results show that with the increase of the average height of the surface textures of the monocrystalline silicon wafer,the optical characteristic coefficient of the monocrystalline silicon cell increases first and then decreases,and the electrical characteristic coefficient gradually decreases.Both the optical characteristics and the electrical characteristics were taken into account at the same time in the medium pyramid texture based silicon cell,and the obtained highest photoelectric conversion efficiency is up to19.49%.