GZO厚度对非晶硅电池中复合背电极的影响

Impact of GZO thickness on the performance of multilayer back reflectors employed in a-Si solar cells

在非晶硅太阳能电池中加入复合背电极是提高非晶硅太阳能电池光电转换效率和稳定性的有效手段.本文利用磁控溅射技术在非晶硅薄膜太阳能电池上制备了ZnO∶Ga(GZO)/Al复合背电极,研究了GZO厚度对GZO薄膜光电性质及非晶硅电池中GZO/Al复合背电极性能的影响.研究表明:随着GZO层厚度的增加,GZO薄膜的光电性质均表现出较高水平,适合制备GZO/Al复合背电极;相较于单层Al背电极的非晶硅太阳能电池,具有GZO/Al复合背电极的太阳能电池性能大幅提高.当GZO层厚度为100 nm时,太阳能电池的短路电流(ISC)、开路电压(VOC)和填充因子(FF)分别达到8.66 mA,1.62 V和54.7%.

Amorphous silicon thin film solar cell has attracted increasing attention because of its high absorption coefficient in visible light regions,low defect density after hydrogenation,simple preparation process,high open circuit voltage,good radiation resistance,and good substrate adaptation.However,with respect to the monocrystalline silicon solar cells,the photoelectric conversion efficiency of amorphous silicon solar cells is not ideal.The addition of multilayer back reflectors to amorphous silicon solar cells is an effective method to improve the conversion efficiency and the stability of the solar cells.In this work,GZO(ZnO∶Ga)/Al back reflectors were prepared by magnetron sputtering on a-Si thin film solar cells.The influence of GZO layer thickness on the optoelectronic properties of GZO film and the performance of amorphous silicon solar cells with GZO/Al back reflector were investigated.Results show that with the increase of the GZO thickness,the electrical and optical properties of GZO films presented satisfactory performance,suggesting that they are suitable for preparing GZO/Al multilayer back reflectors.Compared with the solar cell with single Al reflector,the performance of the solar cell with GZO/Al back reflector significantly improved.Notably,when the thickness of GZO layer was 100 nm,the short-circuit current(ISC),open circuit voltage(VOC),and fill factor(FF)reached 8.66 mA,1.62 V,and 54.7%,respectively.