摘要
Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor gas.The effects of the ratio of hydrogen flow(H2/(Ar+H2)%)on the microstructure were evaluated.Results show that the microstructure,bonding structure,and surface morphology of theμc-Si:H films can be tailored based on the ratio of hydrogen flow.An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%.The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40%to 70%.The surface roughness of thin films increased,and total hydrogen content decreased as the ratio of hydrogen flow increased.Allμc-Si:H films have a preferred(111)orientation,independent of the ratio of hydrogen flow.And theμc-Si:H films had a dense structure,which shows their excellent resistance to post-oxidation.
在低温(100℃)条件下采用磁控溅射在玻璃和硅(100)衬底上沉积氢化微晶硅(μc-Si:H)薄膜,研究不同氢稀释比对微晶硅薄膜微结构特性的影响。结果表明:薄膜从非晶相过渡到了微晶相当氢稀释比增加到约50%,氢化微晶硅薄膜的结晶率随氢稀释比从40%增加到70%先增加后趋于稳定;薄膜的表面粗糙度随着氢稀释比的增加而增加,氢含量的变化趋势与之相反;所制备的氢化微晶硅薄膜都具有(111)择优取向,与氢稀释比无关,且薄膜结构致密。
作者
WANG Lin-qing
ZHOU Yong-tao
WANG Jun-jun
LIU Xue-qin
王林青;周永涛;王军军;刘雪芹(School of Science,Chongqing University of Technology,Chongqing 400054,China;Chongqing Key Laboratory of Green Energy Materials Technology and Systems,Chongqing 400054,China;College of Materials Science and Engineering,Chongqing University of Technology,Chongqing 400054,China;Chongqing Collaborative Innovation Center for Brake Tribological Materials,Chongqing 400054,China)
基金
Projects(51505050,51805063) supported by the National Natural Science Foundation of China for Young Scholars
Projects(KJ1500942,KJQN201801134) supported by the Scientific and Technological Research Program of Chongqing Education Commission of China
Projects(cstc2017jcyjAX0075,cstc2015jcyj A50033) supported by the Chongqing Research Program of Basic Research and Frontier Technology,China