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碳氧化硅过渡层对玻璃基DLC薄膜性能的影响 被引量:1

Effects of Silicon Oxycarbide Transition Layer on Properties of DLC Films on Glass Substrates
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摘要 采用射频-直流磁控溅射法,首先通过不同沉积时间在普通玻璃基底表面得到了不同厚度的碳氧化硅过渡层,然后在过渡层上沉积DLC薄膜。采用X射线衍射仪(XRD)、共焦显微拉曼光谱仪(Raman)、场发射扫描电子显微镜(SEM)、全自动显微硬度仪、紫外可见分光光度计,研究了不同沉积时间下碳氧化硅层对DLC薄膜的结构组成、表面形貌、表面硬度、可见光区域内透过率性能的影响。结果表明,随着沉积碳氧化硅层时间的增加,DLC薄膜样品硬度先增大后减小,可见光区平均透过率逐渐下降;当沉积过渡层时间为5 min时,DLC薄膜样品的玻璃硬度值最大(795 HV),相比未镀膜的玻璃基片(610 HV),硬度值增加了30. 33%,可见光区域内平均透过率为58. 47%。 Using RF-DC magnetron sputtering,different thicknesses of silicon oxycarbide transition layer were obtained on the surface of ordinary glass substrate through different deposition time firstly,and then DLC film was deposited on the transition layer.X-ray diffraction(XRD),confocal micro-Raman spectroscopy(Raman),field emission scanning electron microscopy(SEM),fully automated microhardness tester and UV-visible spectrophotometer were used to study the deposition time of silicon oxycarbide layer for DLC film on influence of the structural composition,surface morphology,surface hardness properties and transmission rate.The results show that with the increase of deposition time of the silicon oxycarbide transition layer,the hardness of the DLC film increases first and then decreases,average transmission rate in visible light region is gradually decreasing.When the deposition time of Transition layer is 5 min,the surface of the DLC film is the most flat,and the coated glass has the highest hardness value(795 HV),which is increased by 30.33%compared to the uncoated glass substrate(610 HV)and average transmittance in the visible region is 58.47%.
作者 常潇 赵青南 王晓宏 陆文涛 董玉红 赵杰 CHANG Xiao;ZHAO Qing-nan;WANG Xiao-hong;LU Wen-tao;DONG Yu-hong;ZHAO Jie(State Key Laboratory of Silicate Materials for Architecture,Wuhan University of Technology,Wuhan 430070,China;Jiangsu Xiuqiang Glasswork Co.,Ltd.,Suqian 223800,China)
出处 《硅酸盐通报》 CAS 北大核心 2019年第10期3033-3039,共7页 Bulletin of the Chinese Ceramic Society
基金 国家十三五重点研发计划子课题(2016YFB0303903-04)
关键词 DLC薄膜 硬度 沉积时间 碳氧化硅过渡层 平均透过率 DLC film hardness deposition time silicon oxycarbide transition layer average transmittance
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