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Chemical vapor deposition growth of crystal monolayer SnS2 with NaCl-assistant

Chemical vapor deposition growth of crystal monolayer SnS2 with NaCl-assistant
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摘要 As an important member of the two-dimensional layers of metal dichalcogenides family, the two-dimensional(2 D)group IV metal chalcogenides(GIVMCs) have been attracting intensive attention. However, the growth of monolayer tin disulfide(SnS2) remains a great challenge contrasted to transition metal dichalcogenides, which have been studied quite maturely. Till date, there have been scant reports on the growth of large-scale and large-size monolayer SnS2. Here, we successfully synthesized monolayer SnS2 crystal on SiO2/Si substrates via NaCl-assisted CVD and the edge can be as long as 80 μm. Optical microscope, Raman spectroscopy, x-ray diffraction, atomic force microscopy(AFM), and energydispersion x-ray(EDX) were performed respectively to investigate the morphology, crystallographic structure, and optical property of the 2 D SnS2 nanosheets. In addition, we discussed the growing mechanism of the NaCl-assisted CVD method. As an important member of the two-dimensional layers of metal dichalcogenides family, the two-dimensional(2 D)group IV metal chalcogenides(GIVMCs) have been attracting intensive attention. However, the growth of monolayer tin disulfide(SnS2) remains a great challenge contrasted to transition metal dichalcogenides, which have been studied quite maturely. Till date, there have been scant reports on the growth of large-scale and large-size monolayer SnS2. Here, we successfully synthesized monolayer SnS2 crystal on SiO2/Si substrates via NaCl-assisted CVD and the edge can be as long as 80 μm. Optical microscope, Raman spectroscopy, x-ray diffraction, atomic force microscopy(AFM), and energydispersion x-ray(EDX) were performed respectively to investigate the morphology, crystallographic structure, and optical property of the 2 D SnS2 nanosheets. In addition, we discussed the growing mechanism of the NaCl-assisted CVD method.
作者 Xiao-Xu Liu Da-Wei He Jia-Qi He Yong-Sheng Wang Ming Fu 刘晓旭;何大伟;何家琪;王永生;富鸣(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology,Beijing Jiao Tong University)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第11期360-363,共4页 中国物理B(英文版)
基金 Project supported by the National Basic Research Program of China(Grant No.2016YFA0202302) the National Natural Science Foundation of China(Grant Nos.61527817,61875236,61905010,and 61975007) the Overseas Expertise Introduction Center for Discipline Innovation,111 Center,China
关键词 group IV metal CHALCOGENIDES tin DISULFIDE two-dimensional materials chemical vapor deposition group IV metal chalcogenides tin disulfide two-dimensional materials chemical vapor deposition
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