一种Ku波段硅基MEMS隔离器设计

Design of a Ku Band Silicon Based MEMS Isolator

设计了一种Ku波段MEMS隔离器。该隔离器的微波铁氧体嵌入放置在MEMS工艺制作的硅腔体内,内导体和负载电阻以及接地孔采用MEMS工艺制作在高阻硅片上,最后利用集成封装技术实现铁氧体、磁钢、硅芯片等单元的有机结合,形成整体结构。该结构与传统微带隔离器比较,优点是图形化技术成熟可靠、铁氧体材料选择更加灵活、薄膜负载耐功率性能明显提高。测试结果显示,15~17 GHz范围内插损小于0.55 dB,驻波小于1.26,隔离度大于21 dB,耐功率可达50 W,整个隔离器尺寸为5.0 mm×5.0 mm×3.7 mm。

A Ku band MEMS isolator was proposed.In the proposed isolator,a microwave ferrite was embedded in the silicon cavity realized by MEMS processing technology.Inner conductor,load resistor and via-hole were fabricated on high resistance silicon wafer.By utilizing integrated packaging technology,the ferrite,magnetic steel and silicon chip were combined to form an integral structure.Compared with the traditional microstrip isolator,the technology of metal patterning is more mature and reliable,the selection of ferrite material is more flexible and the power resistance performance of the film load is obviously improved.Measured results indicate that,the insertion loss is lower than 0.55 dB,the VSWR is lower than 1.26,the isolation is higher than 21 dB and the tolerant power is up to 50 W in the frequency range of 15~17 GHz.The size of the fabricated isolator is 5.0 mm×5.0 mm×3.7 mm.