摘要
介绍了一种用于超大面阵碲镉汞探测器的新型微管电极。使用常规金属沉积、光刻和刻蚀设备,即可在碲镉汞芯片上制备微管电极。在倒装互连时,碲镉汞芯片通过微管电极插入读出电路上的铟球,实现与读出电路互连。使用微管电极互连,互连所需压力比现有工艺降低了约65%,并降低了倒装互连工艺对碲镉汞芯片平坦度和互连精度的要求,大幅度提高了互连成功率。
A new type of micro-tubes and their application in ultra large HgCdTe arrays were introduced in this paper.HgCdTe arrays processed with micro-tubes can be prepared using conventional metal deposition,lithography and etching equipment.During flip interconnection,HgCdTe chip interconnects with readout circuit by inserting indium ball in readout circuit through micro-tube electrode.Using micro-tube electrode interconnection,the interconnect pressure is about 65 % lower than the existing process.Furthermore in the flip interconnect process,the requirements of the chip flatness and interconnect accuracy were reduced,and the interconnect success rate was greatly improved.
作者
张轶
刘世光
张敏
杨斌
ZHANG Yi;LIU Shi-guang;ZHANG Min;YANG Bin(North China Research Institute of Electro-Optics,Beijing 100015,China)
出处
《激光与红外》
CAS
CSCD
北大核心
2019年第11期1350-1352,共3页
Laser & Infrared