无催化剂碳热还原法制备SiC@SiO2纳米电缆（英文）

Synthesis of SiC@SiO2 Nanocables via a Catalyst-free Carbothermal Reduction Method

SiC@SiO2纳米电缆作为一种新型的功能性纳米复合材料,以其优异的性能和广泛的应用前景受到了广泛关注。因此,开发一种有效、经济、方便,SiC@SiO2纳米电缆的制备方法具有重要意义。本研究采用无催化剂的碳热还原法在1500℃的Ar气氛下,通过加热硅粉和硅溶胶混合物从而快速高效地制备了SiC@SiO2纳米电缆。该核壳的纳米电缆是由单晶β-SiC核心和无定形SiO2壳组成,其长度达几百微米,直径为60~80 nm,而且通过调节保温时间可以调控核壳的尺寸。结合实验数据并依据气-固(VS)机理解释了SiC@SiO2纳米电缆的形成过程,同时也进一步丰富了该生长机制,为其工业化生产提供了参考。

SiC@SiO2 nanocables(NC), as a new functional nanocomposite, have captured widespread attention due to their excellent performances and widely application prospects. Therefore, it is significant to develop a kind of effective, economical and environmental method to prepare SiC@SiO2 NC. Herein, a catalyst free carbothermal reduction method was developed to synthesize SiC@SiO2 NC fast and efficently, through heating the mixture of silicon powder and silica sol at 1500 ℃ in Ar. The NC is composed of single-crystal β-SiC core and amorphous SiO2 sheath, with the length of hundreds of micrometers and the diameter of 60-80 nm. And the size of the core-shell can be adjusted by the holding time. The formation of the NC is explained based on the experimental data and the vapor-solid(VS) mechanism. The experiment results can also enrich the mechanism, and offer inspiration for their industrial-scale production.