PI-TSV等效热导率提取与验证

Extraction and Verification on Equivalent Thermal Conductivity of PI-TSV

与传统的T/R组件相比,采用转接板技术实现的2.5D集成硅基T/R组件体积更小,集成度更高,散热性能更好.硅通孔(through-silicon-via, TSV)是其中的关键结构.本文针对2.5D集成的复杂T/R组件难以直接建模进行有限元热学仿真的问题,通过提取TSV等效热导率的方法简化仿真.对聚酰亚胺(Polyimide, PI)作为绝缘介质层的硅通孔(PI-TSV)进行了相应的有限元数值模拟,并改变结构参数,研究了不同结构因素对PI-TSV等效热导率的影响.给出了PI-TSV等效热导率关于中心导电铜柱直径、绝缘介质层厚度及TSV间距的经验公式.

Compared with the traditional T/R modules, the 2.5 D integrated silicon-based T/R modules implemented with TSV interposer are smaller, more integrated and possess better heat dissipation. Through-silicon-via(TSV) is one of the key structures. It is difficult to realize the finite element thermal simulation of complicated 2.5 D integrated T/R modules, thus a solution which utilizes the equivalent thermal conductivity of TSV was employed to simplify the finite element analysis(finite element analysis, FEA) in this paper. The FEA of TSV with polymide liner(PI-TSV) was carried out and the structural parameters were changed to detect their effects on PI-TSV equivalent thermal conductivity. Finally, the empirical equation of PI-TSV equivalent thermal conductivity with respect to copper pillar diameter, insulation thickness and TSV pitch was presented.