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X射线荧光光谱法测定硅片中锑、砷、磷 被引量:1

X-Ray Fluorescence Spectrometry Determination of Sb,As and P in Silicon Wafers
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摘要 利用X射线荧光光谱法直接测定硅片中锑、砷、磷三个主要元素,选择化学法标定的硅片作为标准,通过仪器绘制标准曲线,计算各元素的检出限及各元素的精密度。用电感耦合等离子体光谱法定量分析三个元素,将两种方法的结果进行比对,所得结果基本一致。因此,通过仪器法和化学法的比较,表明该法与常规化学分析相比,具有简便、成本低、分析速度快,准确等优点。 X-ray fluorescence spectrometry(XRF)was used to directly measure the three main elements of antimony,arsenic and phosphorus(Sb,As,P)in silicon wafers.Silicon wafers calibrated by chemical method were selected as the standard,meanwhile,the standard curve was plotted so as to calculate.the detection limit and precision of each element.All three elements were also quantitative measured by inductively coupled plasma spectrometry.The results of both methods were basically the same.Thus,the comparison between instrumental and chemical method showed that XRF has the advantages of simplicity,low cost,fast and accuracy compared to the conventional chemical analysis.
作者 于磊 胡芳菲 宋永清 Yu Lei;Hu Fangfei;Song Yongqing(Guobiao(Beijing)Testing&Certification Company Limited,Beijing 100088,China)
出处 《化学世界》 CAS CSCD 2019年第11期795-798,共4页 Chemical World
关键词 X射线荧光光谱法 硅片 定量分析 X-ray fluorescence spectrometry silicon wafer quantitative analysis
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