一种新型透明导电（Cu,Al）∶ZnO薄膜的结构和性能研究

Study on Microstructure and Properties of the Novel Transparent Conductive(Cu,Al)∶ZnO Thin Films

利用FJL560CI2型磁控溅射仪制备了铜铝共掺杂氧化锌的(Cu,Al)∶ZnO薄膜样品。通过X射线衍射仪、扫描电子显微镜和分光光度计测试研究了氧分压对薄膜微观结构和光学性能的影响。结果表明,不同氧分压下获得的薄膜均具有六角纤锌矿多晶结构,沿c轴择优生长。薄膜的晶粒尺寸随着氧分压的增大逐渐变小。相对于纯氧化锌或仅进行Al掺杂,在同时掺杂Cu、Al之后,(Cu,Al)∶ZnO薄膜的电阻率下降到了10-5Ω·cm数量级,而平均光学透过率保持在90%以上,具有良好的透光性能,是一种具有潜在应用价值的新型透明导电薄膜。氧分压影响薄膜的晶粒尺寸进而影响其光电性能。

Cu-Al co-doped zinc oxide(Cu,Al)∶ZnO thin films were prepared by FJL560CI2 magnetron sputtering system.The influences of oxygen partial pressures on the microstructure and optical property of the films were investigated by X-ray diffraction,scanning electronic microscopy and spectrophotometer,respectively.The results showed that all the co-doped thin films were hexagonally crystalline with a preferred orientation along c-axis.The grain size became smaller with increasing oxygen partial pressure.Compared with the pure or Al-doped ZnO films,(Cu,Al)∶ZnO thin films had electronic resistance as low to the order of 10-5Ω·cm,while their average transmittance remained as high as 90%in the visible range,indicating that they can be candidates as transparently conductive films.The grain size of the films and thus the optoelectric properties were influenced by the oxygen partial pressure during deposition.