摘要
本文在压力为2.5GPa、温度为1000K的合成条件下,采用高温高压法成功制备了钐填充和碲取代的方钴矿化合物Sm0.025CoSb2.975Te0.025。电输运性能测试结果表明:Sm0.025CoSb2.975Te0.025的塞贝克系数为负值,其导电类型为n型,塞贝克系数随温度的升高而减小;电导率随温度的升高先减小后升高;样品Sm0.025CoSb2.975Te0.025的功率因子在660K达到26.8μW·cm^-1·K^-2。
We had synthesized Sm-filled and Te-substituted skutterudite Sm0.025CoSb2.975Te0.025 at 2.5GPa and 1000K.The results show that the electrical resistivity for the Sm0.025CoSb2.975Te0.025 increases with an increase of temperature.The electrical resistivity of Sm0.025CoSb2.975Te0.025 is reduced when compared with that of Sm0.025CoSb2.975Te0.025 sample.The Seebeck coefficient of Sm0.025CoSb2.975Te0.025 is negative which imply it is n-type semiconductors.The Seebeck coef?ficient in absolute value of sample increases with an increase of temperature.The maximum power factor 26.8μW·cm-1·K-2 is obtained at 660 K for the sample of Sm0.025CoSb2.975Te0.025.
作者
姜一平
JIANG Yiping(School of Science,Beihua University,Jilin Jilin 132013)
出处
《河南科技》
2019年第31期38-40,共3页
Henan Science and Technology
基金
吉林省教育厅“十二五”科学技术研究项目(2015130)
关键词
热电材料
塞贝克系数
高温高压
TE materials
Seebeck coefficient
high-pressure and high-temperatureμW·cm-^1·K^-2
