摘要
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
基金
financial support of the Engineering and Physical Sciences Research Council, UK via Grant No. EP/J015792/1,“Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC”
Grant No. EP/M015181/ 1, “Manufacturing nano-engineered III-nitrides”
Grant No. EP/P015719/1, “Quantitative non-destructive nanoscale characterisation of advanced materials”
partially supported by the German “Federal Ministry of Education and Research” (BMBF) within the “Advanced UV for Life” consortium
the “German Research Foundation” (DFG) within the “Collaborative Research Center 787”
