AZO三维薄膜的制备与表征

Fabrication and characterization of three-dimensional AZO thin films

室温下使用磁控溅射粉末靶在玻璃基板上制备AZO(Al:ZnO)二维薄膜;将此薄膜作为基底,利用水热法生长不同掺Al量的一维AZO纳米棒阵列,构建三维结构薄膜。通过扫描电镜、X射线衍射仪、紫外-可见分光光度计和霍尔效应仪对薄膜的微观结构和光电性能进行了表征。结果表明:Al掺杂使二维ZnO薄膜载流子浓度升高、迁移率降低,整体上电阻率下降。一维AZO纳米棒的不同掺铝量可以改变其晶体结构、直径和密集程度,进而可有效调控三维AZO薄膜的光电性能。

AZO(Al:ZnO)films were prepared on glass substrates by magnetron sputtering powder target at room temperature.Using the hydrothermal method,the AZO films were used as two-dimensional substrates,on which one-dimensional AZO nanorod array with different aluminum contents grow to construct three-dimensional structures.The microstructure and photo-electric properties of the films were characterized by Scanning Electron Microscopy,X-ray Diffractometry,UV-visible Spectrophotometer,and Hall Effect Meter.The results show that the Al doping in the two-dimensional ZnO film causes an increase of the carrier concentration,a decrease of the carrier mobility ratio,and accordingly a decrease of the resistivity.The different Al contents can modify the crystal structure,the diameter,and the density of the one-dimensional AZO nanorods,and then effectively regulate the light transmissivity of the three-dimensional AZO films.