摘要
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.
作者
张晓迪
韩伟华
刘雯
赵晓松
郭仰岩
杨冲
陈俊东
杨富华
Xiao-Di Zhang;Wei-Hua Han;Wen Liu;Xiao-Song Zhao;Yang-Yan Guo;Chong Yang;Jun-Dong Chen;Fu-Hua Yang(Engineering Research Center for Semiconductor Integrated Technology&Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
基金
Project supported by the National Key R&D Program of China(Grant No.2016YFA0200503)