摘要
NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C–V and I–V characteristics are compared. It is found that the Al2O3/HfO2 back-gate transistor with NH3-plasma treatment shows the best electrical performance: high on–off current ratio of 1.53 × 107, higher field-effect mobility of 26.51 cm2/V·s, and lower subthreshold swing of 145 m V/dec.These are attributed to the improvements of the gate dielectric and interface qualities by the NH3-plasma treatment and the addition of Al2O3 as a buffer layer.
NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C–V and I–V characteristics are compared. It is found that the Al2O3/HfO2 back-gate transistor with NH3-plasma treatment shows the best electrical performance: high on–off current ratio of 1.53 × 107, higher field-effect mobility of 26.51 cm2/V·s, and lower subthreshold swing of 145 m V/dec.These are attributed to the improvements of the gate dielectric and interface qualities by the NH3-plasma treatment and the addition of Al2O3 as a buffer layer.
作者
陈建颖
赵心愿
刘璐
徐静平
Jian-Ying Chen;Xin-Yuan Zhao;Lu Liu;Jing-Ping Xu(Ningbo Information Technology Service Center,Ningbo 315400,China;School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.61774064)
