摘要
An investigation of germanium-tin(GeSn) on silicon p–i–n photodetectors with a high-quality Ge0.94 Sn0.06 absorbing layer is reported. The Ge Sn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm2 was achieved at room temperature. Furthermore, the Ge Sn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm. This work has great importance in silicon-based short-wave infrared detection.
An investigation of germanium-tin（GeSn） on silicon p–i–n photodetectors with a high-quality Ge0.94 Sn0.06 absorbing layer is reported. The Ge Sn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm2 was achieved at room temperature. Furthermore, the Ge Sn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm. This work has great importance in silicon-based short-wave infrared detection.
作者
赵越
王楠
余凯
张晓明
李秀丽
郑军
薛春来
成步文
李传波
Yue Zhao;Nan Wang;Kai Yu;Xiaoming Zhang;Xiuli Li;Jun Zheng;Chunlai Xue;Buwen Cheng;Chuanbo Li(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Opto-Electronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;School of Science,Minzu University of China,Beijing 100081,China;Optoelectronics Research Center,Minzu University of China,Beijing 100081,China)
基金
Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200500)
the National Natural Science Foundation of China(Grant Nos.61675195,61934007,and 61974170)
Opened Fund of the State Key Laboratory of Integrated Optoelectronics,China(Grant No.IOSKL2018KF17)
Beijing Natural Science Foundation,China(Grant No.4162063)
