摘要
Organo-halide perovskites in planar heterojunction architecture have shown considerable promise as efficient light harvesters in solar cells. We carry out a numerical modeling of a planar lead based perovskite solar cell(PSC) with Cu2ZnSnS4(CZTS) as the hole transporting material(HTM) using the one-dimensional solar cell capacitance simulator(SCAPS-1 D). The effects of numerous parameters such as defect density, thickness, and doping density of the absorber layer on the device performance are investigated. The doping densities and electron affinities of the electron transporting material(ETM) and the HTM are also varied to optimize the PSC performance. It has been observed that a thinner absorber layer of220 nm with a defect density of 1014 cm-3 compared to the reference structure improves the device performance. When doping density of the absorber layer increases beyond 2×1016 cm-3, the power conversion efficiency(PCE) reduces due to enhanced recombination rate. The defect density at the absorber/ETM interface reduces the PCE as well. Considering a series resistance of 5 ?·cm2 and all the optimum parameters of absorber, ETM and HTM layers simultaneously, the overall PCE of the device increases significantly. In comparison with the reference structure, the PCE of the optimized device has been increased from 12.76% to 22.7%, and hence the optimized CZTS based PSC is highly efficient.
Organo-halide perovskites in planar heterojunction architecture have shown considerable promise as efficient light harvesters in solar cells. We carry out a numerical modeling of a planar lead based perovskite solar cell（PSC） with Cu2ZnSnS4（CZTS） as the hole transporting material（HTM） using the one-dimensional solar cell capacitance simulator（SCAPS-1 D）. The effects of numerous parameters such as defect density, thickness, and doping density of the absorber layer on the device performance are investigated. The doping densities and electron affinities of the electron transporting material（ETM） and the HTM are also varied to optimize the PSC performance. It has been observed that a thinner absorber layer of220 nm with a defect density of 1014 cm-3 compared to the reference structure improves the device performance. When doping density of the absorber layer increases beyond 2×1016 cm-3, the power conversion efficiency（PCE） reduces due to enhanced recombination rate. The defect density at the absorber/ETM interface reduces the PCE as well. Considering a series resistance of 5 ?·cm2 and all the optimum parameters of absorber, ETM and HTM layers simultaneously, the overall PCE of the device increases significantly. In comparison with the reference structure, the PCE of the optimized device has been increased from 12.76% to 22.7%, and hence the optimized CZTS based PSC is highly efficient.
