Si-QDs/SiO2薄膜微结构特性分析

Analysis on Microstructure Characteristics of Si-QDs/SiO2 films

采用等离子体化学气相沉积(PECVD)技术制备了多层结构的Si-QDs/SiO2薄膜,在介绍了傅里叶变换红外光谱和拉曼散射谱2种薄膜微结构特性分析技术工作原理的基础上,采用傅里叶变换红外光谱和拉曼散射谱2种检测手段对薄膜的微结构进行了表征。研究发现只有当沉积硅量子点层的N2O流量小于2时,Si-QDs/SiO2多层膜中才会出现结晶的硅量子点,且结晶的硅量子点的尺寸随着氧含量的增加而减小。这为纳米硅在光电器件的应用提供了一定的实验和理论依据。

Si-QDs/SiO2 films with multilayer structure were prepared by plasma enhanced chemical vapor deposition(PECVD).The working principles of two kinds of thin film microstructure characteristics analysis technologies:Fourier transform infrared spectroscopy and Raman scattering spectrum are introduced.The microstructures of the films were characterized by Fourier transform infrared spectroscopy and Raman scattering spectrum.It is found that only when the N2O flow rate of the layers with deposited Si-QDs is less than 2,crystalline Si-QDs can appear in Si-QDs/SiO2 films,and the size of crystalline Si-QDs decreases with the increase of oxygen content.This provides some experimental and theoretical basis for the application of nano-silicon in photoelectric devices.