期刊文献+

Effect of annealing on the damage threshold and optical properties of HfO2/Ta2O5/SiO2 high-reflection film 被引量:1

Effect of annealing on the damage threshold and optical properties of HfO2/Ta2O5/SiO2 high-reflection film
原文传递
导出
摘要 The effect of thermal annealing on the optical properties, microstructure, and laser-induced damage threshold(LIDT) of HfO2/Ta2O5/SiO2 HR films has been investigated. The transmission spectra shift to a short wavelength and the X-ray diffraction peaks of monoclinic structure HfO2 are enhanced after thermal annealing. The calculated results of the m(-111) diffraction peak show that the HfO2 grain size is increased, which is conducive to increasing the thermal conductivity. Thermal annealing also reduces the laser absorption of high-reflection films. The improvement of thermal conductivity and the decrease of laser absorption both contribute to the improvement of LIDT. The experimental results show that the highest LIDT of 22.4 J/cm2 is obtained at300°C annealing temperature. With the further increase of annealing temperature, the damage changes from thermal stress damage to thermal explosion damage, resulting in the decrease of LIDT. The effect of thermal annealing on the optical properties, microstructure, and laser-induced damage threshold(LIDT) of HfO2/Ta2O5/SiO2 HR films has been investigated. The transmission spectra shift to a short wavelength and the X-ray diffraction peaks of monoclinic structure HfO2 are enhanced after thermal annealing. The calculated results of the m(-111) diffraction peak show that the HfO2 grain size is increased, which is conducive to increasing the thermal conductivity. Thermal annealing also reduces the laser absorption of high-reflection films. The improvement of thermal conductivity and the decrease of laser absorption both contribute to the improvement of LIDT. The experimental results show that the highest LIDT of 22.4 J/cm2 is obtained at300°C annealing temperature. With the further increase of annealing temperature, the damage changes from thermal stress damage to thermal explosion damage, resulting in the decrease of LIDT.
作者 Jianing Dong Jie Fan Sida Mao Yunping Lan Yonggang Zou Haizhu Wang Jiabin Zhang Xiaohui Ma 董家宁;范杰;毛思达;兰云萍;邹永刚;王海珠;张家斌;马晓辉(State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology)
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2019年第11期85-90,共6页 中国光学快报(英文版)
基金 supported by the Jilin Science and Technology Development Plan(Nos.20180519018JH and20190302052GX) the Jilin Education Department“135” Science and Technology(No.JJKH20190543KJ) the National Natural Science Foundation of China(No.11474038) the Excellent Youth Foundation of Jilin Province(No.20180520194JH)
  • 相关文献

同被引文献9

引证文献1

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部