大面阵碲镉汞长波红外焦平面器件刻蚀工艺非均匀性研究

Research on Non-Uniformity of Etching Process for Large-Format Long-Wave Infrared Mercury Cadmium Telluride Focal Plane Device

作为探测器组件的性能指标之一,响应率非均匀性对其实际应用具有重要影响,尤其是在低背景空间应用领域。大面阵探测器芯片的接触孔尺寸不均匀是导致器件响应不均匀的因素之一。对1280×1024大面阵长波红外探测器芯片的接触孔刻蚀工艺进行了研究,并提出了优化改进措施。结果表明,本文方法可提高刻蚀工艺的均匀性,进而降低探测器组件响应率的非均匀性。

As one of the characteristics of detector components,the responsivity non-uniformity has an important impact on its practical applications,especially in the low-background space application.The uneven contact-hole size of large-format detector chip is one of the factors which lead to the non-uniformity of device responsivity.The contact-hole etching process of the large-format long-wave infrared detector chip with 1280×1024 pixels is studied,and the optimization measures are proposed.The result shows that the proposed method can improve the uniformity of the etching process,thus improving the responsivity non-uniformity of detector components.