单片集成的增强型和耗尽型pHEMT技术

Monolithic Integration of Enhancement-and Depletion-Mode pHEMT Technology

随着射频/微波器件的快速发展及其应用领域的日益扩大,基于半导体单片集成技术的多种器件集成工艺不断发展。研究了一种采用AlGaAs-InGaAs的砷化镓化合物衬底。琥珀酸湿法蚀刻工艺对器件电性能影响较小。将耗尽型和增强型赝配高电子迁移率晶体管(pseudomorphic High-Electron-Mobility Transistor,pHEMT)器件集成于同一芯片半导体工艺技术。结果表明,增强型晶体管Y型栅极的线宽为0.25 m,开启电压为0.3 V;耗尽型晶体管栅极的线宽为0.5 m,开启电压为-0.8 V,实现了在同一芯片上集成从负到正的栅极电压分布,为设计者提供了更为宽广的设计平台。这种集成技术可以应用于低噪声放大器、线性天线开关、滤波器以及功率控制装置等领域。

With the rapid development and increasingly expanding application fields of RF/microwave devices,various device integration processes based on semiconductor monolithic integration technology have been developing.A GaAs compound substrate with AlGaAs-InGaAs is studied.The succinic acid wet etching process has less influence on the electrical performance of the device.The depleted and enhanced pseudomorphic high-electron-mobility transistor(pHEMT)devices are integrated into the same chip semiconductor process technology.The results show that the Y-gate of enhanced transistor has a linewidth of 0.25 m and an opening voltage of 0.3 V;the gate of depleted transistor has a linewidth of 0.5 m and an opening voltage of-0.8 V.The gate voltage distribution from negative to positive on the same chip is realized,and a broader design platform for designers is provided.This integration technology can be applied to fields such as low noise amplifiers,linear antenna switches,filters,and power control devices.