摘要
为了验证束流强度分布对膜厚的影响,通过束流分布的理论计算模拟出外延膜的分布,并与外延实验样品数据进行了对比,结果证实了我们的猜测,可以部分解释膜厚分布不均的情况。利用公式计算束流强度的分布,得出最薄点应为最厚点的73.26%。实验测试的膜厚的最厚点为8.1582 m,最薄点为5.9362 m,比例为72.76%,与计算结果基本相符。因此,可以确定束流强度分布对膜厚有一定的影响。但实际材料的膜厚不仅受束流分布的影响,还与其他工艺参数相关。由于采用了理论计算与实验相互对比的方法,比单纯实验所得出的结果更准确可靠。
In order to verify the influence of beam intensity distribution on film thickness,the distribution of epitaxial film was simulated by theoretical calculation of beam current distribution,and the data were compared with the samples of epitaxial experiment.The results confirmed our guess,which can partially explain the uneven distribution of film thickness.Using the formula to calculate the distribution of beam intensity,the thinnest point should be 73.26%of the thickest point.While the thickest point of the experimentally tested film thickness was 8.1582 m,the thinnest point was 5.9362 m,the ratio was 72.76%,which was basically consistent with the calculation results.Therefore,it can be determined that the beam intensity distribution has a certain influence on the film thickness.However,the film thickness of the actual material is not only affected by the beam distribution,but also related to other process parameters.Due to the comparison between theoretical calculations and experiments,the results obtained are more accurate and reliable than those obtained by simple experiments.
作者
李震
王文燕
强宇
王丛
高达
LI Zhen;WANG Wen-yan;QIANG Yu;WANG Cong;GAO Da(North China Institute of Optoelectronic Technology,Beijing 100015,China)
出处
《红外》
CAS
2019年第9期23-27,共5页
Infrared
关键词
MBE
硅基衬底
束流分布
MBE
silicon substrate
beam distribution