电感耦合等离子体原子发射光谱（ICP-AES）法测定高纯氧化铟中7种杂质元素

Determination of 7 Impurities Elements in High Purity Indium Oxide by Inductively Coupled Plasma-Atomic Emission Spectrometry

采用电感耦合等离子体原子发射光谱(ICP-AES)法测定高纯氧化铟中杂质元素Al、Cd、Cu、Fe、Pb、Tl和Zn等的含量。使用盐酸(1+1)溶解高纯氧化铟试样,基体铟的干扰采用基体匹配法消除,被测元素之间没有光谱干扰。对方法进行加标回收实验和精密度实验,方法加标回收率在92.2%~110%,测得结果的相对标准偏差在0.57%~5.8%,可以满足高纯氧化铟中Al、Cd、Cu、Fe、Pb、Tl和Zn等杂质元素含量的测定要求。

A method for the determination of Al,Cd,Cu,Fe,Pb,Tl and Zn in high purity In 2O 3 by inductively coupled plasma atomic-emission spectrometry(ICP-AES)is developed.The sample can be completely dissolved by using hydrofluoric acid(1+1).The effects of matrix indium can be eliminated by the matrix matching method,and no spectral interferences between the measured elements took place.Standard spiking tests and precision tests were carried out.The relative standard deviations(RSD)were 0.57%—5.8%and the recoveries were 92.2%—110%,which meet the requirements for the determination of Al,Cd,Cu,Fe,Pb,Tl and Zn in high purity indium oxide.