期刊文献+

雷达通信技术与雷达导航技术的综合应用 被引量:1

Comprehensive Application of Radar Communication Technology and Radar Navigation Technology
下载PDF
导出
摘要 随着雷达技术的进步,量子通信技术不断的发展,量子雷达在以后的发展趋势里会得到更广泛的应用。因为量子通信里具有的性能,比如说精确的导航数据保密会极大地给雷达技术的使用带来便利性,能够使量子雷达应用到更多的场景中去,也能够加快雷达通信技术的发展,从而能够提升我国在无人机探测能力以及增强军事实力等方面的技术,量子雷达还能够在其他的方面有效地起到巨大的作用。本文主要从雷达导航方面的应用以及通信技术的综合应用分析,希望以后对于雷达通信方面的应用以及它的发展起到一定的帮助。 With the advancement of radar technology and the continuous development of quantum communication technology, quantum radar will be more widely used in the future development trend. Because of the performance in quantum communication, for example, accurate navigation data secrecy will greatly facilitate the use of radar technology, enabling quantum radar to be applied to more scenes, and also accelerate the development of radar communication technology. Therefore, it can improve China’s technology in the detection capability of UAVs and enhance military strength.Quantum radar can also play an important role in other aspects. This paper mainly from the application of radar navigation and the comprehensive application analysis of communication technology, I hope to play a certain role in the application of radar communication and its development.
作者 朱福伟 ZHU Fu-wei(Unit 95580 of the Chinese People's Liberation Army,Guiyang Guizhou 550025)
机构地区 中国人民解放军
出处 《数字技术与应用》 2019年第10期43-44,共2页 Digital Technology & Application
关键词 雷达通信技术 雷达导航技术 综合应用 Radar communication technology radar navigation technology comprehensive application
  • 相关文献

参考文献2

二级参考文献18

  • 1Bhat R D R, Sipe J E. Optically injected spin currents in semiconductors[J].Phys Rev Lett, 2000, 85 (25): 5432 5435.
  • 2Bhat R D R, Nemec P, Kerachian Y, et al. Two photon spin injection in semieonductors[J]. Phys Rev B, 2005, 71: 035209 (112).
  • 3Hammar P R, Bennett B R, Yang M J, et al. Observation of spin injection at a {erromagnet semiconductor interface[J]. Phys Rev Lett, 1999, 83: 203-206.
  • 4Jiang X, Wang R, Shelby R M, et al. Highly spin-polarized room temperature tunnel injector for Semiconductor spintron- icsusing Mgo(100) [J]. Phys Rev Lett, 2005, 94:056601 (1-4).
  • 5Kohda M, Kita T, Ohno Y, et al. Bias voltage dependence of the electron spin injection studied in a three terminal device based on a(Ga, Mn)As/n+-GaAs esaki diode[J]. Appl Phys Lett, 2006, 89.- 012103(1-5).
  • 6Jiang J H, Wu M W, Zhou Y. Kinetics of spin coherence of electrons in n-type InAs quantum wells under intense tera- hertz laser fields[J].Phys Rev B, 2008, 78: 125309.
  • 7Tarasenko S A. Spin orientation of a two dimensional elec tron gas by a high frequency electric field[J]. Phys Rev B, 2006, 73: 115317(1-5).
  • 8Murakami S, Nagaosa N, Zhang S C. Dissipationless quan- tum spin current at room temperature [J]. Science, 2003, 301(5) : 1348-1351.
  • 9Valenzuela S O, Tinkham M. Elec:ronic measurement of the spin Hall effect[J].Nature, 20( 6, 442(13): 176-179.
  • 10Shor P W. Sehem for reducing decoherenee in quantum computer memory[J].Phys Rev A, 1995, 52: R2493-2496.

共引文献7

同被引文献6

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部