InGaAs/InP界面控制对InGaAs薄膜电学和光学性质的影响

Effects of InGaAs/InP interface control on the electrical and optical properties of InGaAs films

研究了全固态源分子束外延(MBE)生长InGaAs/InP异质结界面扩散对InGaAs外延薄膜电学和光学性质的影响.通过X射线衍射、变温霍尔测试和变温光致发光等方法对InGaAs薄膜样品进行细致研究.发现在InGaAs/InP界面之间插入一层利用As4生长的InGaAs过渡层,能够显著改善上层InGaAs(利用As2生长)外延薄膜的电学性能,其低温迁移率显著提高.同时荧光峰反常蓝移动消失,光学性质有所改善.研究表明利用As4生长InGaAs过渡层,可显著降低As在InP中反常扩散,获得陡峭的InGaAs/InP界面,从而提高InGaAs材料电学和光学性能.

The effects of interfacial diffusion of InGaAs/InP heterojunction on the electrical and optical properties of InGaAs epitaxial films grown by all-solid source molecular beam epitaxy(MBE)are investigated.The InGaAs thin films are studied by X-ray diffraction,variable temperature Hall and photoluminescence(PL)measurements.It is found that inserting a layer of InGaAs transition layer grown by As4 between InGaAs/InP interface can significantly improve the electrical properties of the InGaAs epitaxial film(grown by As2),and its low temperature mobility is significantly improved.At the same time,the abnormal blue shift of the PL peak disappears with the improvement of InGaAs optical properties.The research shows that the growth of InGaAs transition layer by As4 can significantly reduce the abnormal diffusion of As in InP and obtain a sharp InGaAs/InP interface,thus improving the electrical and optical properties of InGaAs films.