X射线和重离子辐射对GaN基发光二极管的影响

Influence of X-Ray and Heavy Ion Radiation on Properties of GaN-Based LEDs

针对航天军事核物理等应用环境,研究了白光光谱高能X射线和30MeV Si重离子辐射效应对蓝光InGaN/GaN多量子阱发光二极管的阈值电压、发光功率、发光波长及色坐标的影响,得出二极管阈值电压和发光功率随Si粒子注量的变化规律。对比研究结果指出,相比于辐射电离效应,辐射引起的位移效应、热峰效应和载流子移除效应是影响发光二极管特性的主要因素;重离子辐照对发光特性的影响早于电学特性,且辐射主要引起发光二极管色坐标Y分量的变化。

Aiming at the application environment of space,military,nuclear physics,ect,the effects of white light spectral high energy X-ray and 30 MeV Si heavy ion radiation on the threshold voltage,luminous power,luminescence wavelength and color coordinate of blue InGaN/GaN multi-quantum well LEDs were studied.The regular changing pattern of diode threshold voltage and luminous power with Si particle fluence is obtained.The comparison results show that the displacement effect,thermal peak effect and carrier removal effect caused by radiation are the main factors for the degradation of LEDs compared to the radiation ionization effect.It also could be seen that the influence of heavy ion irradiation on luminous characteristics is earlier than that of electrical characteristics,and the radiation mainly causes the change of the Y component of the color coordinate.