摘要
为改善肖特基整流器的阻断特性,将PN结引入到肖特基结构中形成JBS结构,从PN结相关参数入手研究其对JBS整流器阻断特性的影响。利用Silvaco TCAD仿真软件对不同P^+区相对宽度和不同PN结结深的JBS整流器进行仿真分析,主要关注其横向电场分布、肖特基管中心处的纵向电场分布以及每一种情况的阻断特性。仿真结果揭示了肖特基表面电场强度在P^+区到中心处之间的分布规律。通过增加P^+区宽度和PN结结深,实现对肖特基中心最大电场强度的位置调移,从而提高器件的阻断特性。
In order to improve the blocking characteristics of the Schottky rectifier,the PN junction is introduced into the Schottky structure to form the JBS structure,and the influence of the PN junction related parameters on the blocking characteristics of the JBS rectifier is studied.Silvaco TCAD simulation software is used to simulate the transverse electric field distribution of JBS rectifiers with different P^+zones and different PN junction depths,mainly concerning their transverse electric field distribution,longitudinal electric field distribution at the center of Schottky and blocking characteristics in each case.The simulation results reveal the distribution of Schottky surface electric field intensity from the P^+region to the center.By increasing the width of the P^+region and the junction depth of the PN junction,the position of the maximum electric field intensity at the Schottky center is adjusted,thus improving the blocking characteristics of the device.
作者
廉宇盟
关艳霞
LIAN Yumeng;GUAN Yanxia(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)
出处
《微处理机》
2019年第6期6-10,共5页
Microprocessors
关键词
JBS整流器
反向阻断特性
势垒降低
JBS rectifier
Reverse blocking characteristics
Barrier reduction
