碳化硅肖特基器件的刻蚀技术研究

Research on Etching Technology of Silicon Carbide Schottky Devices

随着碳化硅单晶和薄膜制备技术日趋成熟以及相关器件工艺的显著进展,碳化硅肖特基二极管器件制造工艺中的刻蚀技术日趋重要。针对碳化硅和工艺中金属场版的刻蚀进行工艺试验与分析,验证等离子体刻蚀和反应离子刻蚀这两种常用干法刻蚀在碳化硅刻蚀工艺中的表现。实验中多次调节反应条件,包括刻蚀气体、射频功率、气体流量、反应室压力等,最终达到理想的碳化硅界面。采用湿法刻蚀进行金属场版刻蚀,通过细致调整腐蚀液的成分和配比,总结出一套效果优良的金属刻蚀方法,从而在工艺中进一步改良了金属场板的形貌,并提升了碳化硅肖特基二极管器件的成品率和可靠性。

With the growing maturity of SiC single crystal and thin film fabrication technology and the remarkable progress of related device technologies,etching technology in the fabrication process of SiC Schottky diode devices is becoming increasingly important.Process tests and analysis are carried out on SiC and metal field plate etching in the process to verify the performance of plasma etching and reactive ion etching,two commonly used dry etching methods,in SiC etching process.In the experiment,the reaction conditions,including etching gas,RF power,gas flow rate,reaction chamber pressure and so on,were adjusted many times to finally reach the ideal SiC interface.Wet etching is used to etch the metal field plate.By carefully adjusting the composition and ratio of the etching solution,a set of metal etching methods with excellent effects are summarized,thus further improving the morphology of the metal field plate in the process and improving the yield and the reliability of silicon carbide Schottky diode devices.