摘要
Stable radicals are challenging to prepare due to their intrinsic high reactivity.Herein,three trisphenolamine radicals were readily synthesized and exhibited unexpected thermal/electrochemical stability and semiconductor property.These three nitroxide radicals could be considered as a class of aromatized nitro groups or HNO3 derivatives.The closed-shell nitro-like and open-shell nitroxide resonance structure contribute to their outstanding stability.Furthermore,the tunable ground states,extremely low band gap and p-type charge transport properties were systematically investigated.More importantly,the work presents the concept of aromatic inorganic acid radical(AIAR)and aggregation-induced radical(AIR)mechanism to understand the intrinsic structureproperty relationship of these radicals.In addition,we provide a novel strategy for the design of stable and low bandgap radicals for organic electronics,magnetics,spintronics,etc.
Stable radicals are challenging to prepare due to their intrinsic high reactivity. Herein, three trisphenolamine radicals were readily synthesized and exhibited unexpected thermal/electrochemical stability and semiconductor property. These three nitroxide radicals could be considered as a class of aromatized nitro groups or HNO3 derivatives. The closed-shell nitro-like and open-shell nitroxide resonance structure contribute to their outstanding stability. Furthermore, the tunable ground states, extremely low band gap and p-type charge transport properties were systematically investigated. More importantly, the work presents the concept of aromatic inorganic acid radical（AIAR） and aggregation-induced radical（AIR） mechanism to understand the intrinsic structureproperty relationship of these radicals. In addition, we provide a novel strategy for the design of stable and low bandgap radicals for organic electronics, magnetics, spintronics, etc.
基金
supported by the Pearl River S&T Nova Program of Guangzhou (201710010194)
the National Natural Science Foundation of China (61574061, 21520102006, 21634004, 51521002, 91633301)
the Foundation of Guangzhou Science and Technology Project (201707020019)
