场效应管火灾危险性及痕迹鉴定

Fire hazard and trace identification of field effect transistor

为研究场效应管火灾危险性以及形成的痕迹特征,以常见的MOSFET为研究对象分别进行发热和击穿试验,并分析形成的痕迹特征。试验结果表明:MOSFET发热主要与驱动电压、开关频率和散热设计有关,当驱动电压不足、开关频率高或散热设计差时会导致MOSFET发热增大;MOSFET击穿放电会伴随强烈的电弧,甚至可引发明火,在击穿后大部分S极上部壳体留下明显的击穿痕迹,同时各极之间电阻值明显降低。试验结果可为相关痕迹鉴定提供技术方法。

In order to study fire hazard and trace identification of field effect transistor,heating test and breakdown test were conducted by MOSFET as the research object,and the trace characteristics were analyzed.The results showed that MOSFET heating is mainly related to driving voltage,switching frequency and thermal design,the MOSEFT heating was increased by low driving voltage,high switching frequency or poor thermal design.Breakdown discharge was associated with a strong arc of MOSFET,even fire was caused.Most of the shells on the upper part of the source have obvious breakdown traces after breakdown,while the resistance value between the electrodes were decreased.Technical method of trace identification was provided by result of above tests.