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Hole Injection Enhancement of MoO3/NPB/Al Composite Anode

Hole Injection Enhancement of MoO3/NPB/Al Composite Anode
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摘要 An ultra-thin molybdenum(VI)oxide(MoO3)modification layer can significantly improve hole injection from an electrode even though the MoO3 layer does not contact the electrode.We find that as the thickness of the organic layer between MoO3 and the electrode increases,the hole injection first increases and it then decreases.The optimum thickness of 5 nm corresponds to the best current improvement 70%,higher than that in the device where MoO3 directly contacts the Al electrode.According to the 4,4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl(NPB)/MoO3 interface charge transfer mechanism and the present experimental results,we propose a mechanism that mobile carriers generated at the interface and accumulated inside the device change the distribution of electric field inside the device,resulting in an increase of the probability of hole tunneling through the injection barrier from the electrode,which also explains the phenomenon of hole injection enhanced by MoO3/NPB/Al composite anode.Based on this mechanism,different organic materials other than NPB were applied to form the composite electrode with MoO3.Similar current enhancement effects are also observed. An ultra-thin molybdenum(VI) oxide(MoO3) modification layer can significantly improve hole injection from an electrode even though the MoO3 layer does not contact the electrode. We find that as the thickness of the organic layer between MoO3 and the electrode increases, the hole injection first increases and it then decreases.The optimum thickness of 5 nm corresponds to the best current improvement 70%, higher than that in the device where MoO3 directly contacts the Al electrode. According to the 4,4-bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl(NPB)/MoO3 interface charge transfer mechanism and the present experimental results, we propose a mechanism that mobile carriers generated at the interface and accumulated inside the device change the distribution of electric field inside the device, resulting in an increase of the probability of hole tunneling through the injection barrier from the electrode, which also explains the phenomenon of hole injection enhanced by MoO3/NPB/Al composite anode. Based on this mechanism, different organic materials other than NPB were applied to form the composite electrode with MoO3. Similar current enhancement effects are also observed.
作者 Yanjing Tang Xianxi Yu Shaobo Liu Anran Yu Jiajun Qin Ruichen Yi Yuan Pei Chunqin Zhu Xiaoyuan Hou 汤妍婧;俞贤溪;刘少博;蔚安然;秦佳俊;衣睿宸;裴远;朱春琴;侯晓远(State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2019年第12期57-61,共5页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 11874007 and 11574049
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